january 2000 ? 1999 fairchild semiconductor corporation FDT434p rev. c1 (w) FDT434p p-channel 2.5v specified powertrench ? mosfet general description this p-channel 2.5v specified mosfet is produced using fairchild semiconductor?s advanced powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. applications ? low dropout regulator ? dc/dc converter ? load switch ? motor driving features ? ?5.5 a, ?20 v. r ds(on) = 0.050 ? @ v gs = ?4.5 v r ds(on) = 0.070 ? @ v gs = ?2.5 v. ? low gate charge (13nc typical) ? high performance trench technology for extremely low r ds(on) . ? high power and current handling capability in a widely used surface mount package. g d s d sot-22 3 s g d d g d s sot-22 3 * (j23z) s g d absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?20 v v gss gate-source voltage 8 v i d drain current ? continuous (note 1a) ?6 a ? pulsed ?30 power dissipation for single operation (note 1a) 3 (note 1b) 1.3 p d (note 1c) 1.1 w t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 42 c/w r jc thermal resistance, junction-to-case (note 1) 12 c/w package marking and ordering information device marking device reel size tape width quantity 434 FDT434p 13?? 12mm 2500 units FDT434p
FDT434p rev. c1 (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a,referenced to 25 c ?28 mv/ c i dss zero gate voltage drain current v ds = ?16 v, v gs = 0 v ?1 a i gssf gate?body leakage current, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate?body leakage current, reverse v gs = ?8 v v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?0.4 ?0.6 ?1 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a,referenced to 25 c 2 mv/ c r ds(on) static drain?source on?resistance v gs = ?4.5 v, i d = ?6 a v gs = ?4.5 v, i d = ?6 a t j =125 c v gs = ?2.5 v, i d = ?4 a 0.040 0.067 0.050 0.050 0.083 0.070 ? i d(on) on?state drain current v gs = ?4.5 v, v ds = ?5 v ?20 a g fs forward transconductance v ds = ?10 v, i d = ?6 a 6.5 s dynamic characteristics c iss input capacitance 1240 pf c oss output capacitance 270 pf c rss reverse transfer capacitance v ds = ?10 v, v gs = 0 v, f = 1.0 mhz 100 pf switching characteristics (note 2) t d(on) turn?on delay time 8 16 ns t r turn?on rise time 15 25 ns t d(off) turn?off delay time 45 65 ns t f turn?off fall time v dd = ?5 v, i d = ?1 a, v gs = ?4.5 v, r gen = 6 ? 30 50 ns q g total gate charge 13 19 nc q gs gate?source charge 1.8 nc q gd gate?drain charge v ds = ?10 v, i d = ?6 a, v gs = ?4.5 v 3nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?1.3 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?2.1 a (note 2) ?0.75 ?1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 42c/w when mounted on a 1in 2 pad of 2 oz copper b) 95/w when mounted on a .0066 in 2 pad of 2 oz copper c) 110/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% FDT434p
FDT434p rev. c1 (w) typical characteristics 012345 0 4 8 12 16 20 - v , drain- source v o ltage (v) idrai v = - 4.5v gs - 2.5v ds d - 2. 0v -3. 0v -1. 5v 0 5 10 15 20 0.8 1 1.2 1.4 1.6 1.8 - i , drain current (a) drain-source on-resistance v = -2.5v gs d r , normalized ds(on) -4.5v -3.0v -4.0v -3.5v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 t , junction temperature (c) drain-source on-resistance v = - 4.5v gs i = - 6 a d r , normalized ds(on) j
r 25c t =125c a i = -6 a d figure 3. on-resistance variation withtemperature. figure 4. on-resistance variation with gate-to-source voltage. 0.9 1.2 1.5 1.8 2.1 2.4 2.7 0 3 6 9 12 15 -v , gate to source voltage (v) - i , drain current (a) v = -5v ds gs d t = -55c j 125c 25c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.001 0.01 0.1 1 15 -v , body diode forward voltage (v) - i , reverse drain current (a) 25c -55c v = 0v gs sd s t = 125c j figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDT434p
FDT434p rev. c1 (w) typical characteristics 0 3 6 9 12 15 0 1 2 3 4 5 q , gate charge (nc) vga g gs v = -5v ds -1 0v i = -6.0a d -1 5v 0. 10. 3 1 3 10 20 50 100 200 400 1000 2500 -v , dra in to source v ol ta g e (v) ca pa ci t a nc e ( f figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) v gs = -4.5v single pulse r ja = 42 o c/w t a = 25 o c r ds(on) limit dc 1s 10s 100ms 10ms 100 s 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 100 1000 single pulse time (sec) power (w) single pulse r ja = 110 o c/w t a = 25 o c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) + r ja r ja = 110 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p ( pk ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient themal response will change depending on the circuit board design. FDT434p
sot-223 packaging configuration: figure 1.0 components leader tape 500mm minimum or 62 empty pockets trailer tape 300mm minimum or 38 empty pockets sot-223 tape leader and trailer configuration: figure 2.0 cover tape carrier tape note/comments packaging option sot-223 packaging information standard (no flow code) d84z packaging type reel size tnr 13" dia tnr 7" dia qty per reel/tube/bag 2,500 500 box dimension (mm) 343x64x343 184x187x47 max qty per box 5,000 1,000 weight per unit (gm) 0.1246 0.1246 weight per reel (kg) 0.7250 0.1532 sot-223 unit orientation f 852 014 f 852 014 f 852 014 f 852 014 f63tnr label 343mm x 342mm x 64mm intermediate box for standard 184mm x 184mm x 47mm pizza box for d84z option f63tnr label lot: cbvk741b019 fsid: pn2222a d/c1: d9842 qty1: spec rev: spec: qty: 3000 d/c2: qty2: cpn: n/f: f (f63tnr)3 f63tnr label sample f63tnr label antistatic cover tape customized label static dissipative embossed carrier tape packaging description: sot-223 parts are shipped in tape. the carrier tape is made from a dissipative (carbon filled) polycarbonate resin. the cover tape is a multilayer film (heat activated adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. these reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. the reels are dark blue in color and is made of polystyrene plastic (anti- static coated). other option comes in 500 units per 7" or 177cm diameter reel. this and some other options are further described in the packaging information table. these full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. one box contains two reels maximum. and these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. sot-223 tape and reel data and package dimensions september 1999, rev. b
dimensions are in millimeter pkg type a0 b0 w d0 d1 e1 e2 f p1 p0 k0 t wc tc sot-223 (12mm) 6.83 +/-0.10 7.42 +/-0.10 12.0 +/-0.3 1.55 +/-0.05 1.50 +/-0.10 1.75 +/-0.10 10.25 min 5.50 +/-0.05 8.0 +/-0.1 4.0 +/-0.1 1.88 +/-0.10 0.292 +/- 0.0130 9.5 +/-0.025 0.06 +/-0.02 p1 a0 d1 p0 f w e1 d0 e2 b0 tc wc k0 t dimensions are in inches and millimeters tape size reel option dim a dim b dim c dim d dim n dim w1 dim w2 dim w3 (lsl-usl) 12mm 7" dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 5.906 150 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 0.606 11.9 15.4 12mm 13" dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 0.606 11.9 15.4 see detail aa dim a max 13" diameter option 7" diameter option dim a max see detail aa w3 w2 max measured at hub w1 measured at hub dim n dim d min dim c b min detail aa notes: a0, b0, and k0 dimensions are determined with respect to the eia/jedec rs-481 rotational and lateral movement requirements (see sketches a, b, and c). 20 deg maximum component rotation 0.5mm maximum 0.5mm maximum sketch c (top view) component lateral movement typical component cavity center line 20 deg maximum typical component center line b0 a0 sketch b (top view) component rotation sketch a (side or front sectional view) component rotation user direction of feed sot-223 embossed carrier tape configuration: figure 3.0 sot-223 reel configuration: figure 4.0 sot-223 tape and reel data and package dimensions, continued july 1999, rev. b
sot-223 (fs pkg code 47) sot-223 tape and reel data and package dimensions, continued 1 : 1 scale 1:1 on letter size paper part weight per unit (gram): 0.1246 september 1999, rev. c
trademarks acex? coolfet? crossvolt? e 2 cmos tm fact? fact quiet series? fast ? fastr? gto? hisec? the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. syncfet? tinylogic? uhc? vcx? isoplanar? microwire? pop? powertrench qfet? qs? quiet series? supersot?-3 supersot?-6 supersot?-8 ?
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